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 SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1098
DESCRIPTION *With TO-220F package *Complement to type 2SD1589 *DARLINGTON *High DC current gain APPLICATIONS *Low speed switching industrial use *Low frequency power amplifier
PINNING PIN 1 2 3 Emitter Collector Base Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION
Absolute maximum ratings (Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25 PC Collector dissipation TC=25 Tj Tstg Junction temperature Storage temperature 20 150 -55~150 Open emitter Open base Open collector CONDITIONS MAX -100 -100 -7 -5 -8 -0.5 2 W UNIT V V V A A A
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-3A; IB=-3mA IC=-3A; IB=-3mA VCB=-100V ;IE=0 VEB=-5V; IC=0 IC=-3A ; VCE=-2V IC=-5A ; VCE=-2V 2000 500 MIN
2SB1098
SYMBOL VCEsat VBEsat ICBO IEBO hFE-1 hFE-2
TYP.
MAX -1.5 -2.0 -1 -3 15000
UNIT V V A mA
Switching times ton ts tf Turn-on time Storage time Fall time IC=-3A ;IB1=-IB2=-3mA RL=17>;VCC=-50V; 0.5 1 1 s s s
hFE-1 Classifications R 2000-5000 O 3000-7000 Y 5000-15000
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1098
Fig.2 Outline dimensions
3


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